Effect of H2S Annealing on Sb-Doped Cu--In--S Thin Films Prepared by Vacuum Evaporation
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概要
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We investigated the effect of H2S annealing on Sb-doped Cu--In--S thin films prepared using a vacuum evaporation method. These CuInS2 thin films were grown successfully when annealed above 350 °C in H2S atmosphere. It was found that the thin films were closer to stoichiometry at lower annealing temperatures compared with the undoped thin films. The carrier concentrations, resistivities and mobilities of Sb-doped thin films annealed at 400 °C were approximately 1\times 10^{18} cm-3, 30 \Omega cm, and 1 cm2 V-1 s-1, respectively.
- 2012-10-25
著者
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Yoshino Kenji
Department Of Anatomy Nihon University School Of Dentistry At Matsudo
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Tokuda Takahiro
Department of Electrical and Electronics Engineering, Miyazaki University, Miyazaki 889-2192, Japan
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Nakamura Shigeyuki
Department of Electrical and Electronics Engineering, Tsuyama National College of Technology, Tsuyama, Okayama 708-8509, Japan
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Akaki Yoji
Department of Electrical and Computer Engineering, Miyakonojo National College of Technology, Miyakonojo, Miyazaki 885-8567, Japan
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Yamazumi Noriyuki
Department of Electrical and Computer Engineering, Miyakonojo National College of Technology, Miyakonojo, Miyazaki 885-8567, Japan
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