研磨砥粒を含まないスラリを用いたＣｕＣＭＰ技術の開発 : −不均一発泡ポリウレタンパッドを用いたＣｕ残渣の低減−

概要

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Abrasive free polishing (AFP) for copper interconnects was improved. A chemical mechanical polishing (CMP) process using in two-step Cu AFP conditions eliminates copper residue. The process has a higher short-yield margin than the conventional AFP process. It uses both a high selective barrier metal slurry and a randomly foamed polyurethane pad to achieve the same Cu wiring sheet resistance as a conventional polishing process. However, this method allows for increased depressions of less than 20% on a 20-μm Cu line of 98% density after Cu-AFP. We demonstrate that the process can meet the planarity target without any extra intermediate oxide polishes. Moreover, it is the compatible with low-k films and the Cu AFP process, and this prevents delamination and fractures in low-k materials during CMP. Therefore, this process should meet the requirements for Cu interconnects.
社団法人精密工学会の論文