硬質パッドを用いた高平坦化CMP技術の開発 : CMPプロセスにおけるウエーハ面内研磨均一性の改善

概要

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Chemical-mechanical polishing (CMP) has been widely accepted for the planarization of multi-layer structures in semiconductor manufacturing. High performance CMP for the planarization of premetal and inter layer dielectrics is strongly required. Conventional CMP process using the stack-type pads shows good within-wafer uniformity. However this process produces degradation in planarity, especially between center and edge areas of logic devices. In this work, we described an approach to the optimized dielectric planarization method using the hard-pad-based CMP process and achieve improved wafer-scaled uniformity and within-die planarity, simultaneously. By optimizing both polishing conditions and the consumables of the polishers, the hard pad-based process showed an at least 1.6-time improvement in step height reduction compared to the stack-type pad process and a comparable within-wafer uniformity.
公益社団法人精密工学会の論文
2008-11-05