Optical Density of State of Valence Electrons in CeCu_2Si_2
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概要
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Energy distribution curves of valence-band photoelectrons in CeCu.Si. excited withphotons at low energies coincide well with the energy-band density of states curve.The 4f partial energy distribution curve estimated as the difl'erence between the on-and off-resonance spectra in the 4d-4f resonant photoemissiout has a broad profile ex-tending up to 8 eV with three weak features at 0.4, 1.5 and 2.5 eV and does not resem-ble the 4f partial density of states curve given by the energy band calculation. Theoverall shape of the 4f partial energy distribution curve in the major part below 4 eVis similar to a 4f spectrum calculated by Gunnarsson-Sch6nhammer on the basis ofthe Anderson model.
- 1988-05-15
著者
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Ishii Takehiko
Institute For Solid State Physics University Of Tokyo
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ONUKI Yoshichika
Institute of Materials Science,University of Tsukuba
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KOMATSUBARA Takemi
Institute of Materials Science,University of Tsukuba
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Ishii T
Institute For Solid State Physics University Of Tokyo
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Ishii Takehiko
Department Of Material Physics Graduate School Of Engineering Science Osaka University
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Iwasaki T
National Inst. Industrial Health Kawasaki Jpn
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Iwasaki Takeshi
National Institute Of Industrial Health 21-1 Nagao 6-chome Tama-ku Kawasaki 214 Japan
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SODA Kazuo
Institute for Solid State physics, University of Tokyo
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MORI Tamiko
Institute for Solid State physics, University of Tokyo
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Soda K
Department Of Mathematical Sciences College Of Engineering University Of Osaka Prefecture
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Soda Kazuo
Graduate School Of Engineering Nagoya University
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Ishii Tomohiko
Department Of Chemistry Tokyo Metropolitan University
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Soda Kunitsugu
Department Of Bioengineering Nagaoka University Of Technology
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Onuki Yoshichika
Institute Of Material Science The University Of Tsukuba
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Ishii Takehiko
Institute For Solid State Physics The University Of Tokyo
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Komatsubara Takemi
Institute Of Material Science The University Of Tsukuba
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