Magnetoresistance and de Haas-van Alphen Effect in CeRu_2Si_2 and LaRu_2Si_2

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We have measured the magnetoresistance and de Haas-van Alphen (dHvA) effect inCeRu,Siz and LaRu,Si.. From the results of magnetoresistance, CeRuzSi, is con-cluded to be a compensated metal, possibly possessing an open orbit along the c-axisof the tetragonal structure. On the other hand, LaRu.Si. is an uncompensated metal,showing the saturated magnetoresistance. These results imply that the 4 f electrons inCeRu.Si. are itinerant. In the dHvA experiments of LaRu.Si., we have found a largeellipsoidal Fermi surface which occupies roughly half of the Brillouin zone in volume.On the other hand, CeRu.Si. possesses multiply connected Fermi surfaces in part,although main Fermi surfaces are not observed yet.[magnetoresistance, de Haas-van Alphen effect, Fermi surface, CeRu,Si., lj LaRuzSiz{
社団法人日本物理学会の論文
1992-03-15