パルスレーザ堆積法により低温基板に作製した酸化亜鉛系透明導電膜

概要

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Al-doped zinc oxide (AZO) or Ga-doped zinc oxide (GZO) films with c-axis orientation have been deposited on glass substrates by pulsed laser deposition (PLD) using an ArF excimer laser (λ= 193 nm) or Nd:YAG laser (λ= 532, 355, 266 nm). The film deposition took place at substrate temperatures of room temperature (25 °C) ∼ 200 °C. For the GZO film deposited by irradiating a pulsed laser beam of energy density of 1 J/cm2 at repetition frequency of 10 Hz, we obtained the 416 nm-thick GZO film with the lowest resistivity of 2. 89×10-4 Ω·cm for the case at a substrate temperature of room temperature. An average transmittance of more than 80 % in the visible region was obtained for the GZO films fabricated, providing useful functionality as TCO films in the visible region. Moreover, we studied whether the film properties were subject to influences of the position of the plume (in the central axis or at the periphery) generated between the substrate and the target.
社団法人電気学会の論文
2006-11-01