パルスレーザー堆積法により作製したモリブデン酸化物光記録膜の光記録特性

概要

論文の詳細を見る
Approximately 30 nm thick MoO3 films were deposited on glass or polycarbonate substrates by Pulsed Laser Deposition Method using ArF excimer laser (λ=193 nm). For films deposited on glass substrates, transmittance change between the as-deposited and the annealed (340°C for 10 min) states was about 40% at the wavelength of 405 nm. This increase in transmittance was presumably caused by a transformation of oxygen-deficient as-deposited state into oxygen-sufficient annealed state through an annealing-induced reaction involving oxygen absorption, which was confirmed by XRD spectra. The value of CNR for 30 nm thick film grown on polycarbonates was about 50 dB at the write power of 3.0~11.0 mW. The value of CNR for 30 nm thick film with the protection layer of 30 nm was 50 dB at the peak power of 9.0~17.0 mW. These results give a characteristic feature of the wide write-power margin.
日本真空協会の論文
2008-03-20