Optimization of transparent conducting Al-doped zinc oxide filmsprepared by pulsed laser deposition

概要

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Approximately 100-nm-thick Al-doped zinc oxide (AZO) films with 100-500 stacking layers have been prepared on glass substrate at 230℃ by pulsed laser deposition (PLD) using a split target divided into AZO (Al_2O_3 : 1wt.%) and AZO (Al_2O_3 : 2wt.%). Film compositions were adjusted by changing the ratio (trace ratio) of the time required to irradiate each side of the target alternately by an ArF excimer laser (λ= 193nm) or Nd : YAG laser (λ=266, 355 and 532nm). As a result, the AZO film with 500 stacking layers deposited by irradiating pulsed laser beam of the wavelength of 193nm at repetition frequency of 2Hz gave the lowest resistivity of 2.24x10^<-4>Ω・cm under optimized conditions of laser energy density of 1 J/cm^2 and trace ratio of AZO (Al_2O_3 : 1wt.%) : (Al_2O_3 : 2wt.%) = 1 : 4. The surface roughness was 0.69nm and the FWHM of the ZnO(0002) peak was 0.73°. An average transmittance of more than 90% in the visible range were obtained for the AZO films with 500 stacking layers deposited under these optimized conditions, providing useful functionality as TCO films in the visible range.
大阪産業大学の論文
2006-06-30