高周波マグネトロンスパッタ法によるMgO薄膜の結晶性へのN_2+Arガスの効果

概要

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We report the effect of N2 partial pressure on the structure of MgO thin film deposited on Si (100) substrates by rfmagnetron sputtering using single-crystal target and sintered target in Ar+ N2 mixture. The films were evaluated using X-ray deffractmeter (XRD). We examined the change of (200) MgO reflection depending upon the change of background pressure and N2 flowrate when single-crystal target and sintered target were used. From the result, it was shown that in the case of using single-crystal target and sintered target, the crystallinity suddenly improves when background pressure reaches its threshold. However, in the case of sintered target, we found out that an increase in N2 flowrate does not affect the threshold background pressure (PTH) so much in comparison with single-crystal target. This is due to the large amount of H2O residual gas in sintered target as compared to single-crystal target.
日本真空協会の論文
2000-02-20