Joining of SiC Using Amorphous Ti Base Filler Metal(Materials, Metallurgy & Weldability)
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概要
- 論文の詳細を見る
Joining of SiC to SiC or SiC to Cu was made using amorphous Cu_<50>Ti_<50>, Cu_<43>Ti_<57> and Ni_<24・5>Ti_<75・5> filler metals, where reaction-sintered SiC containing 13 at%SiC was used. The joining layer of SiC/SiC joint using Cu-Ti filler is composed of TiSi_2, and small amounts of TiSi. The main part of copper in Cu-Ti filler migrates into SiC, and embrittles SiC near the joining layer of SiC/SiC joint. In joining of SiC to Cu using Cu_<50>Ti_<50> filler, large amounts of silicon in SiC migratrate to Cu through the filler and attain to 16 at%Si in Cu, and large amounts of Cu and Ti move into SiC at a large distance from the joint interface. The joining temperature of SiC/SiC joint using Ni-Ti filler at brazing time of 30min is higher than that of SiC/SiC joint using Cu-Ti filler. The joining layer is composed of TiSi_2 and TiSi. The main part of Ni in Ni-Ti filler enters into SiC during brazing of reaction-sintered SiC.
- 大阪大学の論文
著者
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NAKA Masaaki
Joining and Welding Research Institute, Osaka University
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Okamoto Ikuo
Osaka University
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NAKA Masaaki
Osaka University
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Naka M
Osaka Univ. Ibaraki Jpn
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Naka Masaaki
Welding Research Institute Of Osaka University
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Okamoto Ikuo
Welding Research Institute Of Osaka University
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Tanaka T
Department Of Molecular Medicinal Sciences Graduate School Of Biomedical Sciences Nagasaki Universit
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TANAKA Tasuku
Osaka University
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