Interfacial Reaction between Titanium and Silicon Nitride during Solid State Diffusion Bonding(Materials, Metallurgy & Weldability)

概要

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The present work aims to bond silicon nitride using Ti foil by solid state diffusion bonding, to clarify the formation behavior of the interfacial structure and to control the structure. For each bonding experiment, a 50μm thick Ti foil was inserted between two Si_3N_4 pellets. The bonding temperature and time were selected from 1473 to 1673K and from 0.2 to 32.4ks, respectively. The interfacial structure and elemental concentration profile at the joint interfaces were estimated with SEM-EPMA and XRD. The phase sequence of the joint interfaces bonded at 1573K is observed as α-Ti(N)/Ti_5Si_3/Ti_5Si_3+α-Ti(N)/Ti_5Si_3/Si_3N_4. The strength of the joints bonded at 1573 K for 3.6ks is as low as 3.5MPa. Their fracture occurs always at the Ti_5Si_3/Si_3N_4 interface. In order to suppress the growth of Ti_5Si_3, nitrogen pre-solved Ti foil was bonded with Si_3N_4. The phase in contact with Si_3N_4 becomes Ti_5Si_3+TiN. The thickness of the Ti_5Si_3 layer is successfully suppressed.
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