GaN系青色面発光レーザ用共振器の形成と評価 : 紫外線発光の現状と将来シンポジウム

概要

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We present the design and fabrication of highly reflective and low loss multilayer dielectric mirrors (SiO,/Zr02) for GaN based vertical cavity surface emitting lasers (VCSELs). We consider two types of VCSEL structures; one consists of AlN/GaN DBR and SiO_2/ZrO_2 DBR on a sapphire substrate. A resonant emission from a photo-pumped GalnN/ GaN vertical cavity structure with a cavity length of 1.9 um has been demonstrated. The other consists of two dielectric mirrors (SiO_2/ZrO_2) with a polished thin sapphire substrate. A resonant emission from a photo-pumped GalnN/GalnN vertical cavity with a spectral linewidth of 3.8 nm has been demonstrated. Also, we propose a new structure using lateral growth on dielectric mirrors as a bottom reflector. We have demonstrated and characteried the thin GalnN/GaN Qws fabricated by removing a sapphire substrate with UV light irradiation for making a micro-cavity structure.
日本結晶成長学会の論文
2002-07-01