第 1 部 (5) 半導体デバイスにおける表面処理と強度信頼性

概要

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During fabrication processes of ULSI, ion-implantation process causes high residual stress of the ion-implanted layer in the silicon substrate, and this stress sometimes produces dislocations and worsen electric characteristics. Therefore, the relationship between ion implantation condition and residual stress of the ion-implanted layer in the silicon substrate has been discussed. The arsenic-ion implantation generates compressive stress on the surface of the silicon substrate after ion activation annealing, while the phosphorus-ion implantation generates high tensile stress. These may be caused by the differences of atomic radius between silicon and implanted atoms. It is found that the combination of arsenic-ion implantation and phosphorus-ion implantation can decrease the residual stress of ion-implanted layer and restrain the dislocation generation.
社団法人日本機械学会の論文
2003-03-27