機械系センサネット用低消費電力半導体ひずみセンサの開発

概要

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A low-power micro semiconductor strain sensor that utilizes piezo-resistance effect was developed for measuring the strain of mechanical structures. The strain sensitive device in the sensor chip is a p-type diffused resistor formed on a single-crystalline-silicon. In order to decrease the effect of temperature fluctuation on the output of the sensor, a micro Wheatstone bridge circuit, which consists of active resistors along the [110] direction and dummy resistors along the [110] direction, is formed by using the semiconductor fabrication process. Due to this invention, the temperature dependence decreases to 0.002 μ℃ and thus becomes negligible for practicality. Then, a tensile test for a stainless steel plate to which the sensor is attached was carried out. The experimental result showed that the bridge circuit works correctly and the sensitivity factor (gage ratio) is approximately 52. This measured value is almost equal to the calculated sensor output value using references. Not only this high sensitivity, but also low-noise output was achieved in spite of a small circuit current. The low-noise output is the result of the micro Wheatstone bridge circuit. Thus, it is evident that the merits of the sensor are suitable for mechanical sensor-net systems.
社団法人日本機械学会の論文
2007-05-25