パルスレーザーデポジション法によるBaTi_<0.91>(Hf_<0.5>Zr<0.5>)_<0.09>O_3薄膜の作製と強誘電体特性

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BaTi_<0.91>(Hf_<0.5>Zr<0.5>)_<0.09>O_3 thin films were formed on Pt(111)/Ti/SiO_2/Si(100)substrates by pulsed laser deposition using fourth-harmonic-generated light(λ=266nm)of a Nd^<3+> :YAG laser beam. Crystallinity and stoichiometry of the thin films were determined by X-ray diffraction X-ray fluorescence analysis and electron probe microanalysis. Their ferroelectric properties were investigated from electrical measurements. The leakage current density increased from 10^<-11> to 10^<-3> A・cm^<-2>with increasing electric field up to 200kV. cm^<-1>. The dielectric constant, remanent polarization and coercive field of tghe BaTi_<0.91>(Hf_<0.5>Zr<0.5>)_<0.09>O_<3> thin films were estimated to be 120 at 1 kHz, 8.7 μC・cm^<-2> and 127kV・cm<-1>respectively.
社団法人日本セラミックス協会の論文
2001-08-01