誘導結合プラズマ支援型多重磁極マグネトロンスパッタ法により作製したCu薄膜に及ぼす陽極電圧と基板バイアス電圧の効果

概要

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The effect of substrate dc bias voltage (VS) and anode dc voltage (VA) on the properties of Cu thin films using magnetron sputtering with multipolar magnetic plasma confinement assisted by inductively coupled plasma (MMPC-ICP) was characterized by X-ray diffraction (XRD) and Atomic Force Microscope (AFM). The anode electrode was placed at a distance of 10 mm from the substrate in the MMPC-ICP system in order to increase the plasma density near the substrate. It is demonstrated that an increase in VA results in a decrease in the VS voltage at which the substrate current begins to saturate. The Cu thin films were prepared by changing the substrate dc bias voltage from -100 V to 0 V at the different anode voltages ranging from 0 V to 40 V. It is shown that the Cu film deposited at VA=40 V and VS=-20 V has a maximum grain size of about 430 nm; this value is about 5 times higher than that at VA=0 V and VS=-20 V.
2008-06-20