高周波-直流結合形マグネトロンスパッタ法におけるAr^+及びCu^+イオンのエネルギー分布

概要

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Energy distribution of 40Ar+ ions and 63Cu+ ions incident to the substrate surface in rf-dc coupled magnetron sputtering with which an rf source and a dc power were simultaneously applied to a copper target in order to control the incident ion energy on the target were measured by an energy-resolved mass spectrometer. The target power (rf+ dc) was varied from 2.0 to 5.0 kW at an Ar gas pressure of 1.0 Pa. The mean energy of 40Ar+ ions and 63Cu+ ions shifted from about 11.0 to 3.0 eV with the increase of the ratio of dc power to rf power. The number of 63Cu+ ions significantly increased with the increase of the target power, whose value was about 500 times the number of 40Ar+ ions at the target power of 5.0 kW.
日本真空協会の論文
2003-03-20