Relationship between Defects and Stochastic Effect in Chemically Amplified Resists Used for Extreme Ultraviolet Lithography

概要

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With the approach of the realization of extreme ultraviolet (EUV) lithography, practical issues such as the defects of resist patterns have attracted attention. In this study, the defects of line-and-space resist patterns were investigated from the viewpoint of the stochastic effects of chemical reactions. The stochastic effect was expressed using the standard deviation \sigma of the protected-unit concentration. To eliminate bridges within a 6.8 μm length in the line direction, a 1.5--2.0\sigma difference is required between the average protected-unit concentration and the dissolution point at the center of the space. To eliminate line breaks and severe pinching within a 6.1 μm length in the line direction, a 1.2--1.6\sigma difference is required between the average protected-unit concentration and the dissolution point at the center of the resist line pattern.
2013-07-25