Relationship of Electron Diffusion Length to Line Edge Roughness in Chemically Amplified Extreme Ultraviolet Resists
スポンサーリンク
概要
- 論文の詳細を見る
In chemically amplified resists, secondary electrons sensitize acid generators upon exposure to extreme ultraviolet (EUV) radiation. The migration of secondary electrons degrades the original EUV aerial image and increases the line edge roughness (LER). However, the longer the migration of secondary electrons is, the more acid generators are decomposed. Namely, the resist sensitivity increases with the migration of secondary electrons. Furthermore, the relationship of LER to the sensitivity is a trade-off one. Therefore, the relationship of the migration of secondary electrons to LER is complex. In this study, the effect of the migration of secondary electrons on the image quality was defined using the electron diffusion length specified to line-and-space patterns. The dependence of electron diffusion length and quantum efficiency on material properties was calculated on the basis of the sensitization mechanisms of chemically amplified EUV resists to investigate the relationship of the migration of secondary electrons to LER. Among material properties, the effect of thermalization distance on LER becomes significant below the 22 nm node. The reduction in thermalization distance leads to the reductions in both electron diffusion length and quantum efficiency. Although the reduction in thermalization distance is required to suppress electron diffusion length, the short thermalization distance does not necessarily lead to a low LER. It was found that the thermalization distance of ${\sim}4$ nm is sufficient in the resist design for the 16 nm node.
- 2011-03-25
著者
関連論文
- Subpicosecond Pulse Radiolysis Study of Geminate Ion Recombination in Liquid Benzene
- Study on Radiation-Induced Reaction in Microscopic Region for Basic Understanding of Electron Beam Patterning in Lithographic Process (II) : Relation between Resist Space Resolution and Space Distribution of Ionic Species
- Study on Radiation-Induced Reaction in Microscopic Region for Basic Understanding of Electron Beam Patterning in Lithographic Process (I) : Development of Subpicosecond Pulse Radiolysis and Relation between Space Resolution and Radiation-Induced Reactions
- Proton Transfer to Melamine Crosslinkers in X-Ray Chemically Amplified Negative Resists Studied by Time-Resolved and Steady-State Optical Absorption Measurement
- X-ray Reflectivity Study on Depth Profile of Acid Generator Distribution in Chemically Amplified Resists
- Stroboscopic Picosecond Pulse Radiolysis Using Near-Ultraviolet-Enhanced Femtosecond Continuum Generated by CaF_2
- Effects of Dielectric Constant on Acid Generation in Chemically Amplified Resists for Post-Optical Lithography
- Relationship between Sensitivities of Chemically Amplified Resist Based on Adamantane Derivatives upon Exposure to ArF Excimer Laser, Electron Beam, and Extreme Ultraviolet Radiation
- Enhancement of Acid Production in Chemically Amplified Resist for Extreme Ultraviolet Lithography
- Difference in Reaction Schemes in Photolysis of Triphenylsulfonium Salts between 248nm and Dry/Wet 193nm Resists
- Reactivity of Acid Generators for Chemically Amplified Resists with Low-Energy Electrons
- Resist Thickness Effect on Acid Concentration Generated in Poly(4-hydroxystyrene) Film upon Exposure to 75keV Electron Beam
- Reaction Mechanisms of Brominated Chemically Amplified Resists
- Optimum Dissolution Point of Chemically Amplified Resists in Terms of Trade-Off Relationships between Resolution, Line Edge Roughness, and Sensitivity
- Radiation Chemistry of Fluoronaphthalene as a Candidate for Absorption Enhancement Component of Chemically Amplified Extreme Ultraviolet Resists
- Thermalization Distance of Electrons Generated in Poly(4-hydroxystyrene) Film Containing Acid Generator upon Exposure to Extreme Ultraviolet Radiation
- Assessment and extendibility of chemically amplified resists for extreme ultraviolet lithography: consideration of nanolithography beyond 22nm half-pitch
- Reconstruction of Latent Images from Dose-Pitch Matrices of Line Width and Edge Roughness of Chemically Amplified Resist for Extreme Ultraviolet Lithography
- Protonation Sites in Chemically Amplified Resists for Electron-Beam Lithography
- Relationship of Electron Diffusion Length to Line Edge Roughness in Chemically Amplified Extreme Ultraviolet Resists
- Reactivity of Acid Generators for Chemically Amplified Resists with Low-Energy Electrons
- Backexposure Effect in Chemically Amplified Resist Process upon Exposure to Extreme Ultraviolet Radiation
- Resist Parameter Extraction from Line-and-Space Patterns of Chemically Amplified Resist for Extreme Ultraviolet Lithography
- Effects of Flare on Latent Image Formation in Chemically Amplified Extreme Ultraviolet Resists
- Dynamics of Radical Cation of Poly(4-hydroxystyrene)-Based Chemically Amplified Resists for Extreme-Ultraviolet and Electron Beam Lithographies
- Difference between Acid Generation Mechanisms in Poly(hydroxystyrene)- and Polyacrylate-Based Chemically Amplified Resists upon Exposure to Extreme Ultraviolet Radiation
- Study of the Reaction of Acid Generators with Epithermal and Thermalized Electrons
- Dependence of Absorption Coefficient and Acid Generation Efficiency on Acid Generator Concentration in Chemically Amplified Resist for Extreme Ultraviolet Lithography
- Reactivity of Halogenated Resist Polymer with Low-Energy Electrons
- Effect of Molecular Structure on Depth Profile of Acid Generator Distribution in Chemically Amplified Resist Films
- Single-Component Chemically Amplified Resist Based on Dehalogenation of Polymer
- Potential Cause of Inhomogeneous Acid Distribution in Chemically Amplified Resists for Post Optical Lithography
- Reaction Mechanisms of Brominated Chemically Amplified Resists
- Proton Dynamics in Chemically Amplified Electron Beam Resists
- Precise Control of Nanowire Formation Based on Polysilane for Photoelectronic Device Application
- Relationship between Acid Generator Concentration and Acid Yield in Chemically Amplified Electron Beam Resist
- Quencher Effects at 22 nm Pattern Formation in Chemically Amplified Resists
- Effects of Rate Constant for Deprotection on Latent Image Formation in Chemically Amplified Extreme Ultraviolet Resists
- Feasibility Study of Chemically Amplified Extreme Ultraviolet Resists for 22 nm Fabrication
- Dependence of Acid Yield on Acid Generator in Chemically Amplified Resist for Post-Optical Lithography
- Evaluation of Chemical Gradient Enhancement Methods for Chemically Amplified Extreme Ultraviolet Resists
- Dynamics of Radical Cation of Poly(4-hydroxystyrene) and Its Copolymer for Extreme Ultraviolet and Electron Beam Resists
- Theoretical Study on the Dependence of Acid Distribution on Material Properties of Chemically Amplified Extreme Ultraviolet Resists
- Side Wall Degradation of Chemically Amplified Resists Based on Poly(4-hydroxystyrene) for Extreme Ultraviolet Lithography
- Theoretical Study on Relationship between Acid Generation Efficiency and Acid Generator Concentration in Chemically Amplified Extreme Ultraviolet Resists
- Polymer-Structure Dependence of Acid Generation in Chemically Amplified Extreme Ultraviolet Resists
- Resist Properties Required for 6.67nm Extreme Ultraviolet Lithography
- Analysis of Dose-Pitch Matrices of Line Width and Edge Roughness of Chemically Amplified Fullerene Resist
- Effect of Ultrahigh-Density Ionization of Resist Films on Sensitivity Using Extreme-Ultraviolet Free-Electron Laser
- Acid Generation Mechanism for Extreme Ultraviolet Resists Containing Pinanediol Monosulfonate Acid Amplifiers: A Pulse Radiolysis Study
- Resist Materials and Processes for Extreme Ultraviolet Lithography
- Electron and Hole Transfer in Anion-Bound Chemically Amplified Resists Used in Extreme Ultraviolet Lithography
- Modeling and Simulation of Acid Diffusion in Chemically Amplified Resists with Polymer-Bound Acid Generator
- Effect of Ultrahigh-Density lonization of Resist Films on Sensitivity Using Extreme-Ultraviolet Free-Electron Laser
- Modeling and Simulation of Acid Diffusion in Chemically Amplified Resists with Polymer-Bound Acid Generator
- Relationship between Normalized Image Log Slope and Chemical Gradient in Chemically Amplified Extreme Ultraviolet Resists
- Effects of Ester Groups on Proton Generation and Diffusion in Polymethacrylate Matrices
- Effects of Polymer Interference during Acid Generation on Latent Image Quality of Extreme Ultraviolet Resists
- Polymer Screening Method for Chemically Amplified Electron Beam and X-Ray Resists
- Radiation Chemistry in Chemically Amplified Resists
- Effect of Acid Diffusion and Polymer Structure on Line Edge Roughness
- Study of Acid-Base Equilibrium in Chemically Amplified Resist
- Correlation between $C_{37}$ Parameters and Acid Yields in Chemically Amplified Resists upon Exposure to 75 keV Electron Beam
- Difference of Spur Distribution in Chemically Amplified Resists upon Exposure to Electron Beam and Extreme Ultraviolet Radiation
- Acid Diffusion Length in Line-and-Space Resist Patterns Fabricated by Extreme Ultraviolet Lithography
- Relationship between Defects and Stochastic Effect in Chemically Amplified Resists Used for Extreme Ultraviolet Lithography
- High-Absorption Resist Process for Extreme Ultraviolet Lithography
- Latent Image Created Using Small-Field Exposure Tool for Extreme Ultraviolet Lithography
- Diffusion Control Using Matrix Change during Chemical Reaction for Inducing Anisotropic Diffusion in Chemically Amplified Resists
- Protonation Sites in Chemically Amplified Resists for Electron-Beam Lithography
- Electron and Hole Transfer in Anion-Bound Chemically Amplified Resists Used in Extreme Ultraviolet Lithography
- Point Spread Function for the Calculation of Acid Distribution in Chemically Amplified Resists Used for Electron-Beam Lithography
- Feasibility study of sub-10-nm half-pitch fabrication by chemically amplified resist processes of extreme ultraviolet lithography: I. Latent image quality predicted by probability density model
- Stochastic effects in 11 nm imaging of extreme ultraviolet lithography with chemically amplified resists
- Theoretical study on stochastic defect generation in chemically amplified resist process for extreme ultraviolet lithography
- Effects of effective reaction radius for neutralization on performance of chemically amplified resists