Resist Properties Required for 6.67nm Extreme Ultraviolet Lithography
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概要
著者
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Itani Toshiro
Euvl Infrastructure Dev. Center Inc. (eidec) Ibaraki Jpn
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KOZAWA Takahiro
The Institute of Scientific and Industrial Research (ISIR), Osaka University
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Erdmann Andreas
Fraunhofer IISB
関連論文
- Subpicosecond Pulse Radiolysis Study of Geminate Ion Recombination in Liquid Benzene
- Study on Radiation-Induced Reaction in Microscopic Region for Basic Understanding of Electron Beam Patterning in Lithographic Process (II) : Relation between Resist Space Resolution and Space Distribution of Ionic Species
- Study on Radiation-Induced Reaction in Microscopic Region for Basic Understanding of Electron Beam Patterning in Lithographic Process (I) : Development of Subpicosecond Pulse Radiolysis and Relation between Space Resolution and Radiation-Induced Reactions
- Proton Transfer to Melamine Crosslinkers in X-Ray Chemically Amplified Negative Resists Studied by Time-Resolved and Steady-State Optical Absorption Measurement
- X-ray Reflectivity Study on Depth Profile of Acid Generator Distribution in Chemically Amplified Resists
- Stroboscopic Picosecond Pulse Radiolysis Using Near-Ultraviolet-Enhanced Femtosecond Continuum Generated by CaF_2
- Effects of Dielectric Constant on Acid Generation in Chemically Amplified Resists for Post-Optical Lithography
- Relationship between Sensitivities of Chemically Amplified Resist Based on Adamantane Derivatives upon Exposure to ArF Excimer Laser, Electron Beam, and Extreme Ultraviolet Radiation
- Enhancement of Acid Production in Chemically Amplified Resist for Extreme Ultraviolet Lithography
- Difference in Reaction Schemes in Photolysis of Triphenylsulfonium Salts between 248nm and Dry/Wet 193nm Resists
- Reactivity of Acid Generators for Chemically Amplified Resists with Low-Energy Electrons
- Resist Thickness Effect on Acid Concentration Generated in Poly(4-hydroxystyrene) Film upon Exposure to 75keV Electron Beam
- Reaction Mechanisms of Brominated Chemically Amplified Resists
- Optimum Dissolution Point of Chemically Amplified Resists in Terms of Trade-Off Relationships between Resolution, Line Edge Roughness, and Sensitivity
- Radiation Chemistry of Fluoronaphthalene as a Candidate for Absorption Enhancement Component of Chemically Amplified Extreme Ultraviolet Resists
- Thermalization Distance of Electrons Generated in Poly(4-hydroxystyrene) Film Containing Acid Generator upon Exposure to Extreme Ultraviolet Radiation
- Assessment and extendibility of chemically amplified resists for extreme ultraviolet lithography: consideration of nanolithography beyond 22nm half-pitch
- Reconstruction of Latent Images from Dose-Pitch Matrices of Line Width and Edge Roughness of Chemically Amplified Resist for Extreme Ultraviolet Lithography
- Protonation Sites in Chemically Amplified Resists for Electron-Beam Lithography
- Relationship of Electron Diffusion Length to Line Edge Roughness in Chemically Amplified Extreme Ultraviolet Resists
- Reactivity of Acid Generators for Chemically Amplified Resists with Low-Energy Electrons
- Backexposure Effect in Chemically Amplified Resist Process upon Exposure to Extreme Ultraviolet Radiation
- Resist Parameter Extraction from Line-and-Space Patterns of Chemically Amplified Resist for Extreme Ultraviolet Lithography
- Effects of Flare on Latent Image Formation in Chemically Amplified Extreme Ultraviolet Resists
- Feasibility Study of Chemically Amplified Resists for Short Wavelength Extreme Ultraviolet Lithography
- Dynamics of Radical Cation of Poly(4-hydroxystyrene)-Based Chemically Amplified Resists for Extreme-Ultraviolet and Electron Beam Lithographies
- Difference between Acid Generation Mechanisms in Poly(hydroxystyrene)- and Polyacrylate-Based Chemically Amplified Resists upon Exposure to Extreme Ultraviolet Radiation
- Study of the Reaction of Acid Generators with Epithermal and Thermalized Electrons
- Dependence of Absorption Coefficient and Acid Generation Efficiency on Acid Generator Concentration in Chemically Amplified Resist for Extreme Ultraviolet Lithography
- Reactivity of Halogenated Resist Polymer with Low-Energy Electrons
- Effect of Molecular Structure on Depth Profile of Acid Generator Distribution in Chemically Amplified Resist Films
- Single-Component Chemically Amplified Resist Based on Dehalogenation of Polymer
- Potential Cause of Inhomogeneous Acid Distribution in Chemically Amplified Resists for Post Optical Lithography
- Reaction Mechanisms of Brominated Chemically Amplified Resists
- Proton Dynamics in Chemically Amplified Electron Beam Resists
- Precise Control of Nanowire Formation Based on Polysilane for Photoelectronic Device Application
- Relationship between Acid Generator Concentration and Acid Yield in Chemically Amplified Electron Beam Resist
- Quencher Effects at 22 nm Pattern Formation in Chemically Amplified Resists
- Effects of Rate Constant for Deprotection on Latent Image Formation in Chemically Amplified Extreme Ultraviolet Resists
- Feasibility Study of Chemically Amplified Extreme Ultraviolet Resists for 22 nm Fabrication
- Dependence of Acid Yield on Acid Generator in Chemically Amplified Resist for Post-Optical Lithography
- Evaluation of Chemical Gradient Enhancement Methods for Chemically Amplified Extreme Ultraviolet Resists
- Dynamics of Radical Cation of Poly(4-hydroxystyrene) and Its Copolymer for Extreme Ultraviolet and Electron Beam Resists
- Theoretical Study on the Dependence of Acid Distribution on Material Properties of Chemically Amplified Extreme Ultraviolet Resists
- Side Wall Degradation of Chemically Amplified Resists Based on Poly(4-hydroxystyrene) for Extreme Ultraviolet Lithography
- Theoretical Study on Relationship between Acid Generation Efficiency and Acid Generator Concentration in Chemically Amplified Extreme Ultraviolet Resists
- Polymer-Structure Dependence of Acid Generation in Chemically Amplified Extreme Ultraviolet Resists
- Resist Properties Required for 6.67nm Extreme Ultraviolet Lithography
- Analysis of Dose-Pitch Matrices of Line Width and Edge Roughness of Chemically Amplified Fullerene Resist
- Effect of Ultrahigh-Density Ionization of Resist Films on Sensitivity Using Extreme-Ultraviolet Free-Electron Laser
- Acid Generation Mechanism for Extreme Ultraviolet Resists Containing Pinanediol Monosulfonate Acid Amplifiers: A Pulse Radiolysis Study
- Resist Materials and Processes for Extreme Ultraviolet Lithography
- Electron and Hole Transfer in Anion-Bound Chemically Amplified Resists Used in Extreme Ultraviolet Lithography
- Modeling and Simulation of Acid Diffusion in Chemically Amplified Resists with Polymer-Bound Acid Generator
- Effect of Ultrahigh-Density lonization of Resist Films on Sensitivity Using Extreme-Ultraviolet Free-Electron Laser
- Modeling and Simulation of Acid Diffusion in Chemically Amplified Resists with Polymer-Bound Acid Generator
- Relationship between Normalized Image Log Slope and Chemical Gradient in Chemically Amplified Extreme Ultraviolet Resists
- Effects of Ester Groups on Proton Generation and Diffusion in Polymethacrylate Matrices
- Effects of Polymer Interference during Acid Generation on Latent Image Quality of Extreme Ultraviolet Resists
- Polymer Screening Method for Chemically Amplified Electron Beam and X-Ray Resists
- Radiation Chemistry in Chemically Amplified Resists
- Effect of Acid Diffusion and Polymer Structure on Line Edge Roughness
- Study of Acid-Base Equilibrium in Chemically Amplified Resist
- Correlation between $C_{37}$ Parameters and Acid Yields in Chemically Amplified Resists upon Exposure to 75 keV Electron Beam
- Difference of Spur Distribution in Chemically Amplified Resists upon Exposure to Electron Beam and Extreme Ultraviolet Radiation
- Acid Diffusion Length in Line-and-Space Resist Patterns Fabricated by Extreme Ultraviolet Lithography
- Relationship between Defects and Stochastic Effect in Chemically Amplified Resists Used for Extreme Ultraviolet Lithography
- An In situ Analysis of the Dissolution Characteristics of Half Pitch Line and Space Extreme Ultraviolet Lithography Resist Patterns
- High-Absorption Resist Process for Extreme Ultraviolet Lithography
- Latent Image Created Using Small-Field Exposure Tool for Extreme Ultraviolet Lithography
- Diffusion Control Using Matrix Change during Chemical Reaction for Inducing Anisotropic Diffusion in Chemically Amplified Resists
- Protonation Sites in Chemically Amplified Resists for Electron-Beam Lithography
- Electron and Hole Transfer in Anion-Bound Chemically Amplified Resists Used in Extreme Ultraviolet Lithography
- Point Spread Function for the Calculation of Acid Distribution in Chemically Amplified Resists Used for Electron-Beam Lithography
- Feasibility study of sub-10-nm half-pitch fabrication by chemically amplified resist processes of extreme ultraviolet lithography: I. Latent image quality predicted by probability density model
- Stochastic effects in 11 nm imaging of extreme ultraviolet lithography with chemically amplified resists
- Theoretical study on stochastic defect generation in chemically amplified resist process for extreme ultraviolet lithography
- Effects of effective reaction radius for neutralization on performance of chemically amplified resists
- Inhomogeneity of PAGs in Resist Film studied by Molecular Dynamics Simulations