非晶質InxSe1-x-SnO2構造における光起電力効果

概要

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Electrical and optical properties of the amorphous InxSe1-xfilms with 210 μm thickness have been studied. Photovoltages as a function of wavelength have been studied on the system of Sn2O amorphous InxSei_1-x film (Sb H-Au). For the system of x=0.4, the photovoltage spectra for various annealing temperatures have been investigated. Annealing effect was prominent at 80 °C for 15 minutes and in this case, the conversion efficiency was obtained to be about 0.8%. For the system of x=0.2, in order to improve the conversion efficiency, we have processed films at the temperature range from 50°C to 120°C under illumination. The maximum efficitncy about 2.8% was obtained at the measurement temperature 105°C. A tentative band model for a consistent explanation of the experimental data is proposed for both cases.
日本真空協会の論文