MNM-3A-5 単結晶シリコン薄膜のTEM内引張試験(セッション 3A 単結晶・多結晶シリコンの疲労寿命評価とメカニズムの解明)

概要

論文の詳細を見る
In this work, we propose the tensile testing of single crystal silicon in transmission electron microscope (TEM). This method enables us to observe a tensile deformation under stress loading, fracture process of single crystal silicon and dislocation. Deep reactive ion etching was used to fabricate devices which made of a 4-inch silicon-on-insulator (SOI) wafer. Driving method of tensile testing was piezo elements built into TEM holder.
一般社団法人日本機械学会の論文
2010-10-12