Chip-Level Substrate Coupling Analysis with Reference Structures for Verification(Physical Design,<Special Section>VLSI Design and CAD Algorithms)

概要

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Chip-level substrate coupling analysis uses F-matrix computation with slice-and-stack execution to include highly concentrated substrate resistivity gradient. The technique that has been applied to evaluation of device-level isolation structures against substrate coupling is now developed into chip-level substrate noise analysis. A time-series divided parasitic capacitance (TSDPC) model is equivalent to a transition controllable noise source (TCNS) circuit that captures noise generation in a CMOS digital circuit. A reference structure incorporating TCNS circuits and an array of on-chip high precision substrate noise monitors provides a basis for the verification of chip-level analysis of substrate coupling in a given technology. Test chips fabricated in two different wafer processings of 0.30-μm and 0.18-μm CMOS technologies demonstrate the universal availability of the proposed analysis techniques. Substrate noise simulation achieves no more than 3dB discrepancy in peak amplitude compared to measurements with 100-ps/100-μV resolution, enabling precise evaluation of the impacts of the distant placements of sensitive devices from sources of noise as well as application of guard ring/band structures.
社団法人電子情報通信学会の論文
2007-12-01