918 圧電PZT薄膜を用いた低電圧駆動RF-MEMSスイッチの創製(GS-3,16 薄膜(2),研究発表講演)

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We have developed piezoelectric RF-MEMS switch using PZT thin films for low-voltage actuation. PZT thin films with composition of Zr/Ti=53/47 were grown on the (111)Pt/Ti/Si substrates by rf-sputtering. Micro-cantilever switches, composed of PZT thin films and Cr elastic layers, were successively fabricated as unimorph actuators with a length of 500μm and width of 90μm. The tip deflection of the cantilevers was measured using a Laser Doppler Vibrometer and we observed piezoelectric vibration level as high as 0.62μm at a relatively small voltage of 5V. However, the micro-cantilevers had large initial bending because of residual stress in the PZT and Cr layers. We need to We established the fabrication process of RF-MEMS switch using PZT thin films on Si substrate.
一般社団法人日本機械学会の論文
2005-03-18