2404 圧電PZT薄膜を用いた両持ち梁型RF-MEMSスイッチの開発(J22-1 圧電素子とマイクロアクチュエータ,J22 マイクロメカトロニクス,2005年度年次大会)

概要

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We have developed piezoelectric RF-MEMS switches using PZT thin films for low-voltage actuation. PZT thin films with composition of Zr/Ti=53/47 were grown on the (111) Pt/Ti/Si substrates by RF-sputtering. The cantilever and double supported beam type actuators, composed of PZT thin films and Cr/Al elastic layers, were successively fabricated as unimorph structure. The deflection of the actuators was measured using a Laser Doppler Vibrometer and we observed the largest displacement of cantilever type actuator was 1μm and one of the double supported beam type actuator was 100nm at a relatively small voltage of 5V. Initial bending of the double supported beam type actuator caused by residual stress in the PZT and Cr/Al layers had smaller than one of cantilever type actuator, however the displacement magnitude of the double supported beam type actuator enough for switching couldn't obtain. We optimized the design of the actuator by FEM analysis. Fig.2 Fabrication process of PZT micro-actuator
一般社団法人日本機械学会の論文
2005-09-18