919 RFスパッタ法によるPb(Zr,Ti)O_3傾斜組成薄膜の作製と評価(GS-3,16 薄膜(2),研究発表講演)

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Pb(Zr,Ti)O_3 (PZT) thin films with graded composition profiles were prepared by multi-target RF-sputtering aiming to enhance the piezoelectric properties by active domain motion. PZT thin films were epitaxially grown on (100)Pt/(100)MgO substrates and their composition was modulated from Zr/Ti=30/70 to 53/47 or from 53/47 to 30/70. XRD measurements revealed that Pb(Zr_<0.70>Ti_<0.30>)O_3 thin films with uniform composition showed clear α/c domain structure, while Pb(Zr_<0.53>Ti_<0.47>)O_3 films showed perfect c-axis orientation. In the case of the graded compositional PZT films, clear α/c-axis orientation was observed, suggesting the films are composed of modulated domain structure along the thickness. The transverse piezoelectric properties were calculated from the displacement of the unimorph cantilevers. The PZT thin films with the graded composition profiles show larger piezoelectricity than that of uniform compositional PZT films. Furthermore, for the graded compositional PZT films, piezoelectric coefficient of e_<31> gradually increased with increasing applying voltage, indicating the domain motion is superimposed on the lattice motion.
一般社団法人日本機械学会の論文
2005-03-18