Crystallization and Electrical Properties of Amorphous Cu-Ag-P Alloys

概要

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Amorphous Cu-Ag-P alloys (Cu : 79〜86, Ag : 6〜14, P : 11〜14 wt%) were prepared by melt-quenching technique. The crystallization process of these amorphous alloys was examined by electrical resistivity, X-ray diffraction and differential thermal analysis techniques. The T-T-T diagram of the amorphous Cu-Ag-P alloys could be divided into five distinct regions and the electrical resistivity of these alloys decreased in the order of amorphous → metastable-I → supersaturated metastable → metastable-II → stable state. Compared with traditional strain gauge materials, the present amorphous alloys exhibited a higher gauge factor (1.8〜3.1), lower thermal electromotive force relative to copper (1.07μv/℃), comparable specific resistivity at room temperature (80μΩ・cm) and higher negative temperature coefficient of specific resistivity (-0.7〜-1.2x10^<-4>/℃). These values showed to be useful as guage materials below the crystallization temperature.
東北大学の論文
1980-03-29