ゾル-ゲル法によるマイクロセンサー, マイクロアクチュエーター用圧電体チタン酸ジルコン酸鉛セラミックス薄膜の作製とその特性

概要

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Crack-free ferroelectric thin films of lead zirconatetitanate (PbZr_xTi_<1-x>O_3;PZT)for microsensors and microactuators have been prepared by sol-gel processing. Lead acetate, zirconium butoxide, and titanium isopropoxide were used as precursors, acetion acid as the solvent and ethylene glycol as an additive. Films of up to 3.1μm thick were prepared by a spin-coating and multiple coating technique. The stoichiometric microstructure of the film separared into islandlike perovskite regions and interconnected amorphous and/or nanocrystalline regions. Films with a Pb concentration greater than 20% have only perovskite regions. The dielectric constant of these films is 1800. The spontaneous polarization, the remnant polarization and the coercive field are 39.2×10^<-2>C/m^2 , 18.4×10^<-2>C/m^2 and 59.9×10^5 V/m, respectively. Aiming at the application of piezoelectric thin films to microsensors and microactuators, we fabricated a PZT diaphragm by anisotropic etching of silicon. The Young's modulus, residual stress and piezoelectric coefficient d_<31> were measured as 91.2GPa, -2.0MPa and 30.0×10^<12> C/N, respectively, from its deflection and piezoelectric output.
社団法人日本セラミックス協会の論文
1996-03-01