Electrical Resistivity in Oxide Semiconductor BaBi_<1-x>Mo_xO_3

概要

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Single crystals of BaBi,-,Mo...0. were gT0W11 w'itla .xup to 0.15. -the electrical resis-tivity sltowed an activation type temperature dependence. The activation euvergy atroom temperature increases from 0.1 to 0.24 (eV) witlt iuucreasing x to 0.15. Near 0.05of x transition from monoclinic to orthorhoxmbic structures was observed. The corre-sponding change in tlae resistivity was observed in tlte range of 0.03<,v<0.05. The ac-tivation energy increases wlaen the crystal symmetry increases with increasiuag tempera-lure, or with increasing molybdenum couacentration. Such results rule out tlae pictureof CDW-sar>semiconductor. Instead we suggest the existence of localizatnon gap atthe Fermi surface, wlaich comes from tlae disorder of Bi" and Bi"-, from ium)curities,or from oxygen vacancies.oxide, semiconductor, electrical resistivity, Basic., Cr>W, locaxizatxon
社団法人日本物理学会の論文
1992-02-15