キックアウト機構による半導体超拡散の同定

概要

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Experiments involving 750 keV electron beam doping (EBD) of Si and Zn atoms into GaAs were performed for systems of GaAs (layer 3)/Si(Zn)//Si(Zn)/ GaAs(layer 1). Si(Zn)/GaAs consists of Si(Zn) evaporation deposited layers on GaAs wafers. The overlying layer is in contact only with another Si(Zn) layer. The surface of layer 3 (GaAs) was irradiated with a fluence of(〜3.7-5.0) × 10^<17> electrons cm^<-2> at 750keV and at 100℃ in a N_2 gas atmosphere and at a mean current density of 8.1 μA cm^<-2> using a Van de Graaff accelerator. After irradiation, the remaining unreacted Si and Zn layers were carefully removed by chemical etching. It was confirmed by Auger electron spectroscopy that no Si or Zn layer remained on the wafer after etching. The unannealed GaAs oystals were measiired by SIMS and PL analysk The diffusion depth of Zn atoms was found to increase with the thicknesses of the deposited layers. In the PL spectra for layer 1, there were indicated two peaks, which were attributed tot the band-to-acceptor transitions and neutral acceptor-bound-exciton peaks.
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