電子線照射によるはじき出し原子のモンテカルロシミュレーションと超拡散プロセス

概要

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Electron energy spectra as a function of depth were computed by a Monte Carlo simulation for GaAs and Si wafers irradiated by the electron beams at 750keV. The energy spectra of primary displaced atoms were calculated using the electron energy spectra. Experimentally, the electron beam dopig for three layer system (Si/P/Si, GaAs/Zn//Zn/GaAs etc. whose Zn/GaAs is Zn evaporated layer on GaAs, and the mark // is only in contact with the other Zn surface on GaAs) were investigated. The experimental results obtained from SIMS measurements indicated that the total number of doped impurities in the depth direction in substrate layer 1 may be roughly estimated. Approximately 0.5 - 70% of high concentration impurities of atoms arriving at the surface layers induce the reaction of kick-out mechanism. When Zn layer thickness increases, the total number of Zn_<Ga> by the second kick-out mechanism increases in the layer 1.
大同工業大学の論文