レーザー、アニール後のドープSi膜の電気的活性化(第18回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2010))

概要

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After excimer laser annealing (ELA) for heavily boron- or phosphorous-doped Si films, the relation between the conductivity and the crystallinity was studied compared with the result after furnace annealing (FA). The sheet resistance decreased with improving the crystallinity of the films. By optimizing the laser annealing condition, the Si films of 50 nm thickness show extremely low sheet resistance below 90 ohm/□ for phosphorus dose of 2x1O^<15> cm^<-2> and for boron dose of 5x10^<15> cm^<-2>. The effective activation rate for the doped Si film after ELA is comparable to the result for bulk single-crystalline Si under thermal equilibrium condition. ELA activation subsequently after heavily ion implantation is more effective than FA and is expected to source and drain or Si gate in CMOS TFTs as well as an electrode for pin sensor diode and for solar cell as a System on Panel (SoP) application.
2010-06-23