高濃度Si薄膜中の不純物活性化 : ELAによるSi薄膜中P原子の高効率活性化(シリコン関連材料の作製と評価)

概要

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After UV pulsed excimer laser annealing to highly phosphorus dosed Si film at a dose of 2E15cm2, the conductivity and the correlating crystallinity in the film were analyzed. The crystallinity deduced by S.E. (Spectroscopic Ellipsometry) and by Raman spectroscopy shows good correlation. The conductivity increased with improving the crystallinity. By performing an optimized laser annealing, efficient solidified activation after instantaneous melting occurs, extremely low sheet resistance value down to 100ohm/sq. was obtained for the annealed Si film. Clear tensile stress was observed similar to the case of ELC (Excimer Laser Crystallization) for un-doped Si film. ELA activation subsequently after ion doping is considered effective to the formation of source and drain in high-performance Si TFTs as well as a sensor diode for SoP (System on Panel).
社団法人電子情報通信学会の論文
2007-12-07