ガラス基板上不純物ドープSi薄膜のアニールによる電気的活性化(TFTの材料・デバイス技術・応用及び一般)

概要

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After UV pulsed excimer laser annealing for heavily boron-, or phosphorous doped Si film, the relation between the conductivity (related to the sheet resistance) and the crystallinity was studied. As a result, the sheet resistance decreased with improving the crystallinity. By adopting and optimizing the UV pulsed excimer laser annealing, efficient solidified activation after melting occurs, the Si film of 50 nm thickness shows extremely low sheet resistance below 90 ohm/□ for phosphorus dose of 2E15 cm^<-2> and of 50 ohm/□ for boron dose of 5E15 cm^<-2>. The result of effective activation for the doped Si film is comparable to the result for bulk single-crystalline Si under thermal equilibrium condition. ELA activation subsequently after ion implantation is effective and is expected to a formation of source and drain or Si gate in CMOS TFTs as well as an electrode for pin sensor diode for SoP (System on Panel) application.
2008-04-04