Influence of Native Oxides on the Reliability of Ultrathin Gate Oxide

概要

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The influence of wet cleaning processes, such as the SC-1 and H_2O_2 processes, on the time dependent dielectric breakdown (TDDB) of ultrathin gate oxide was investigated. A large difference in the reliability by wet cleaning processes was observed, especially when an electrode is an anode. The reliability of the gate oxide by the H_2O_2 process was worse than SC-1. It was found by Fourier transformed infrared attenuated total reflection (FT-IR-ATR) analysis that the amount of structural imperfection of native oxides formed in H_2O_2 was larger than SC-1. Since stress-induced positive charges which affect the TDDB properties are generated near the anode- side oxide interface, a large amount of structural imperfection in the native oxides formed in H_2O_2 probably results in a defective thermal oxide surface, leading to an increase in the generation and trapping of positive charge.
社団法人応用物理学会の論文
1998-02-15