Fabrication Process and Properties of Nb-InSb-Nb Planar Junction
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概要
- 論文の詳細を見る
A Nb-InSb-Nb planar junction with a normal layer of InSb thin film was fabricated by a new process. In this report, the details of the fabrication process and properties of the junction are discussed. The Nb-InSb-Nb junction fabricated using the new process showed a supercurrent. This means that there is no notable barrier, such as the Schottky barrier at the interface between Nb and InSb. The InSb film has a mobility of 500 acd 700 cm^2/V・s, which is 17 acd 23 times larger than that of Si. This makes it possible to realize the superconductor-semiconductor-superconductor junction with a low carrier density of 10^<17> cm^<-3>.
- 社団法人応用物理学会の論文
- 1992-04-15
著者
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TAKAI Yoshiaki
Department of Electronics Engineering, Nagoya University
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HAYAKAWA Hisao
Department of Electronics Engineering, Nagoya University
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AKAIKE Hiroyuki
Department of Electronics, Nagoya University
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Takai Yoshiaki
Nagoya University
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Akaike Hiroyuki
Department Of Quantum Engineering Nagoya University
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Akaike Hiroyuki
Department Of Electronics Faculty Of Engineering Nagoya University
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早川 尚男
京都大学大学院人間・環境学研究科
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Hato Tsunehiro
Superconductivity Research Laboratory Istec
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Hato Tsunehiro
Department Of Electronics Faculty Of Engineering Nagoya University
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Akaike H
Nagoya Univ. Nagoya Jpn
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Akaike Hiroyuki
Nagoya Univ. Nagoya‐shi Jpn
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Takai Yoshiaki
Department of Electrical Engineering and Computer Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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