Fabrication of S-N-S Junction with the Normal Layer of InSb
スポンサーリンク
概要
- 論文の詳細を見る
Superconductor-semiconductor-superconductor weak links with a normal layer of InSb thin film were fabricated. A large normal resistance of 16Ω and a critical supercurrent of 50 μA were obtained at 4.2 K for a channel length of 0.19 μm between Nb electrodes. The normal resistance of 16 Ω is about 40 times as large as that of a junction with the normal layer of a Si bulk crystal.
- 社団法人応用物理学会の論文
- 1991-07-15
著者
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TAKAI Yoshiaki
Department of Electronics Engineering, Nagoya University
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HAYAKAWA Hisao
Department of Electronics Engineering, Nagoya University
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AKAIKE Hiroyuki
Department of Electronics, Nagoya University
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Takai Yoshiaki
Nagoya University
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Akaike Hiroyuki
Department Of Quantum Engineering Nagoya University
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Akaike Hiroyuki
Department Of Electronics Faculty Of Engineering Nagoya University
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早川 尚男
京都大学大学院人間・環境学研究科
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Hato Tsunehiro
Superconductivity Research Laboratory Istec
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Hato Tsunehiro
Department Of Electronics Faculty Of Engineering Nagoya University
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Akaike H
Nagoya Univ. Nagoya Jpn
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Akaike Hiroyuki
Nagoya Univ. Nagoya‐shi Jpn
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Takai Yoshiaki
Department of Electrical Engineering and Computer Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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