温度測定による坤塙内シリコン融液流れの推定 : 融液密度異常が流れに及ぼす影響(<小特集> バルク結晶成長の新しいアプローチ)

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Temperature fluctuations of silicon melt in the crucible were measured to evaluate the flow structure during the Czochralski silicon growth process. The impurities which influence the density anomaly of the silicon melt were doped as experimental parameters. The frequency components of these fluctuations were investigated. The flow structure under the growth interface region is found to be basically a random one that is supposed to represent the "soft urbulence" induced by Rayleigh-Benard convection. The addition of gallium which is known to suppress the density anomaly to the melt changes the flow structure to a laminar-like one when the melt depth is shallow, while the flow structure is still similar to a soft turbulence in case with boron-doped at the same melt depth. The addition of gallium also makes the temperature wave patterns considered to be caused by baroclinic instability stable below the free surface and the periphery of crystal, resulting in sharp temperature fluctuations. In cases of undoped and boron-doped melt, temperature fluctuations in these regions become gentle and the frequency components of temperature waves described above weaken considerably. The results of wavelet analysis indicate the existence of a stable wave in a comparatively long period position in such a situation. The difference between these two conditions suggests that the flow regime changes from the azimuthal periodic structure to a complex flow. The density anomaly of silicon melt in a CZ silicon growth process is supposed to exist and have a strongly influence on the melt flow structure in the crucible.
日本結晶成長学会の論文
1996-06-25

温度測定による坤塙内シリコン融液流れの推定 : 融液密度異常が流れに及ぼす影響(<小特集> バルク結晶成長の新しいアプローチ)

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