円環法によるシリコン融液の表面張力測定と表面張力温度依存性を考慮した坩堝内融液流れ

概要

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The surface tension of non-doped, gallium-doped and boron-doped silicon melts has been measured as a function of temperature in purified argon atmosphere (oxygen partial pressure was less than 10^<-8>MPa using the ring tensiometry technique. In all cases, the surface tension decreases linearly with increasing temperature. The surface tensions of γ=763-0.219×(T-T_m)N/m in the non-doped silicon melt, γ=777-0.243×(T-T_m)mN/m in the gallium-doped silicon melt and γ=721-0.098×(T-T_m)mN/m in the boron-doped silicon melt were obtained. We have found that the surface tension of the silicon melt depends on the species of impurity. On the basis of the surface tension data obtained, the silicon melt flow in a crucible during the crystal growth has been studied by numerical analysis. Furthermore, in order to verify the calculated melt flow, the temperature variation of the silicon melts in a crucible was measured by the thermocouples in the actual large crystal growth process. It has been found out that the silicon melt flow in a crucible during the crystal growth process is able to estimate more accurately by the consideration of the Marangoni flow caused by the temperature dependence of surface tension.
湘南工科大学の論文
2001-03-18