第 1 部 (2) 半導体集積回路における微細金属薄膜配線の断線故障予測

概要

論文の詳細を見る
Recently, a governing parameter for electromigration damage in passivated polycrystalline lines, (AFD)^*_<gen>, was formulated. The new parameter proposed, (AFD)^*_<gen>, takes the effect of the atomic density gradient into account. We also developed an (AFD)^*_<gen>-based method for determination of film characteristics. In this study, this method is applied to both covered and uncovered metal lines with two line lengths. The film characteristics are experimentally obtained for these lines. Based on a discussion about the validity of the obtained characteristic constants, we are able to conclude that the (AFD)^*_<gen> parameter are useful. Next, the prediction method for electromigration failure in a passivated polycrystalline line is proposed using (AFD)^*_<gen>. Both the lifetime and the failure location in the passivated polycrystalline lines are predicted by numerical simulation of failure process. Good agreement between the prediction and the experimental results are obtained concerning both lifetime and failure location.
社団法人日本機械学会の論文
2003-03-27