T0401-1-4 スパッタ法で成膜した高純度Al薄膜におけるエレクトロマイグレーションの支配因子の評価(金属ナノ材料の創製と展開(1))

概要

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A way of testing the electromigration (EM) resistance of different high purities Al based on atomic flux divergence (AFD) method has been proposed in our previous work. With the theoretical analysis, the EM resistance has been clarified to depend on various parameters which are related with the material properties such as diffusion coefficient and grain size. The present research compared the EM resistance of different high purities Al films with the same thickness of 5μm. For these films, the grain size, which is realized as a factor affecting the resistance, was changed compared with the 1μm thick samples, which have been used in the previous work. Finally, according with the analysis by the synthesis of the obtained EM ranking for the 1 and 5μm thick films, the evaluation of the dominant factor, diffusion coefficient, for EM in high purities Al film deposited by sputtering was approached.
社団法人日本機械学会の論文
2009-09-12