Statistical Parameter Extraction for Intra- and Inter-Chip Variabilities of Metal–Oxide–Semiconductor Field-Effect Transistor Characteristics
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概要
- 論文の詳細を見る
To design high-yield products, we must consider not only the inter-chip variability but also the intra-chip variability of transistor characteristics. In this paper, we propose a statistical parameter extraction considering both intra- and inter-chip variabilities. In the proposed method, the model parameters of intra-chip variability are directly extracted from the measured current variation, so that the accuracy of current variation is expected to improve. The extracted parameters are compared with the measured delay variation of the ring oscillator to verify the accuracy of the proposed method.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-01-15
著者
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Okada Kenichi
Department Of Communications And Computer Engineering Kyoto University
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Onodera Hidetoshi
Department of Communications and Computer Engineering, Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan
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Onodera Hidetoshi
Department of Communication and Computer Engineering, Graduate School of Informatics, Kyoto University, Kyoto 606-8501, Japan
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