Measurement of Integrated PA-to-LNA Isolation on Si CMOS Chip
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概要
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This paper presents measurement of on-chip coupling between PA and LNA integrated on Si CMOS substrate, which is caused by substrate coupling, magnetic coupling, power-line coupling, etc. These components are decomposed by measurements using diced chips. The result reveals that the substrate coupling is the most dominant in CMOS chips and the total isolation becomes less than -50dB with more than 0.4mm PA-to-LNA distance.
- 2011-06-01
著者
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Okada Kenichi
Department Of Physical Electronics Tokyo Institute Of Technology
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Matsuzawa Akira
Department Of Physical Electronics Tokyo Institute Of Technology
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Okada Kenichi
Department Of Communications And Computer Engineering Kyoto University
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Matsuzawa Akira
Dep. Of Physical Electronics Tokyo Inst. Of Technol.
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HONG JeeYoung
Department of Physical Electronics, Tokyo Institute of Technology
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MINAMI Ryo
Department of Physical Electronics, Tokyo Institute of Technology
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Minami Ryo
Department Of Physical Electronics Tokyo Institute Of Technology
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Matsuzawa Akira
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Hong Jeeyoung
Department Of Physical Electronics Tokyo Institute Of Technology
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