ホットプレス法によるAgInSe2バルク結晶の結晶成長

概要

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Undoped polycrystalline AgInSe2 bulk crystals were successfully grown at low temperature (700℃) using Hot-Press Method. The starting materials were stoichiometrically mixed Ag2Se and In2Se3 powders. The size of all samples was 2 cm in diameter. The samples were evaluated X-ray diffraction, SEM, EPMA, Density measurement, Hall measurement and optical transmittance measurement. We obtained AgInSe2 single phase at 700℃. The grain size was approximately 80 nm and the presence of lattice defects such as Se atom in the Ag site and/or Se atom in the In site might lead to an enhancement in n-type electrical conductivity at 700℃. The crystal at 700℃ had a resistivity of 0.16 Ωcm, a carrier concentration of (7.6×10)16 cm-3 and a mobility of 73 cm2V-1s-1 obtained by Hall measurement at RT. From optical transmittance measurement, the bandgap was estimated to be 1.204 eV at RT.
宮崎大学の論文
2008-08-30