スプレー熱分解法 ZnO系透明導電膜の作成とアニール効果

概要

論文の詳細を見る
Transparent conducting In-doped ZnO thin films were deposited on glass substrates by spray pyrolysis method. A carrier concentration increased and a resistivity decreased with increasing indium (In) concentration. A minimum resistivity was obtained in In-doped 2 mol%. This result was due to the donor type defects such as In atom substituted in the Zn site and/or interstitial In atom. An average optical transmittance of all films was higher than 80% in visible range. Furthermore, non-doped ZnO and 2 mol% In-doped ZnO thin filme were annealed at various temperatures from 100 to 600 °C in nitrogen ambient. In-doped ZnO thin films had c-axis orientation and an intensity of the orientation increased with increasing annealing temperature. From SEM images, a grain size appeared to be constant with the increasing temperature. Therefore, a resistivity decreased with the increasing annealing temperature.
宮崎大学の論文
2008-08-30