スプレー熱分解法で作成したIn-doped ZnO薄膜の熱処理による光学的、電気的性質

概要

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In-doped ZnO thin film which were deposited by chemical spray pyrolysis performed thermal treatment in N2 atmosphere in temperature from 100 to 600℃ for 5min. These samples were characterized by x-ray diffraction (XRD), scanning electron microscope (SEM), optical transmittance and Hall measurement. In comparison to JCPDS card, as-deposited ZnO film was polycrystalline with a hexagonal wurtzite structure from the XRD measurement. This sample had an orientation in c-axis direction and an intensity of the orientation increased with increasing thermal treatment temperature. From the SEM images, a grain size was appeared to be constant with the increasing the temperature. As the result, grain boundary scattering of carriers decreased. Therefore, a mobility increased and a resistivity decreased with increasing the temperature.
宮崎大学の論文
2007-08-30