V族元素添加CuInS_2結晶のホットプレス成長

概要

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Abstract V-group elements (P, As, Sb and Bi) doped CuInS2 crystals were successfully grown by Hot-Press method at low pressure (22.5 MPa). It was concluded that all samples had stoichiometric compositions and were formed in a chalcopyrite structure. Thermo probe analysis showed that all the samples doped with V-group elements indicated p-type conductivity. Since a non-doped sample showed n-type conductivity because of S vacancy defect, I considered that the V-group elements substituted in the S site (Ps, Ass, Sbs and Bis) and acted as acceptors. The density of P- and Sb-doped CuInS2 were almost the same as that of the CuInS2 single crystal grown by the traveling heater method and non-doped sample grown by high pressure condition (>60 MPa). As-and Bi-doped samples with low resistivity had complex defects and/or two kinds of acceptor-type defects .
宮崎大学の論文