無添加およびSb添加カルコパイライト型化合物半導体CuInS_2薄膜の作製および評価(研究論文編)

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Structural, electrical and optical properties of non-doped and Sb-doped CuInS_2 thin films grown by single source thermal evaporation method were studied. The films were annealed from 100 to 500℃ in air after the evaporation. The x-ray diffraction spectra indicated that polycrystalline CuInS_2 films were successfully obtained by annealing above 200℃. This temperature was lower than that of non-doped films. The surface morphologies of the non-doped samples were investigated by scanning electron microscopy. The maximum grain size of the samples after annealing at 400℃ was above 500nm. Furthermore, we found that the Sb-doped films became close to stoichiometry in comparison with non-doped films. The Sb-doped samples annealed above 200℃ has bandgap energy of 1.43〜1.50eV.
都城工業高等専門学校の論文