真空蒸着法によるAgGaSe2薄膜作成と評価

概要

論文の詳細を見る
Abstract We prepared AgGaSe2 thin films by vacuum evaporation using binary materials of Ag2Se and Ga2Se3. After the evaporation, these samples were annealed from 100 ℃ to 600 ℃ for 10 minute in Nitrogen atmosphere. These samples were evaluated by X-ray diffraction, surface morphology, optical properties and electrical properties. The sample annealed at 600 ℃ showed a single phase AgGaSe2. This grain size was larger than any other samples. Thermoprobe analyze showed n-type conduction. It was assumed that as-deposition sample and the samples annealed at low temperature had many donor defects of Se vacancy. Furthermore carrier concentration decreases with increasing annealing temperature, because a number of accepter defect Ag vacancy increases with annealing temperature, as a result these showed high resistivity.
宮崎大学の論文