真空蒸着法を用いたAgInS_2薄膜の作製と評価

概要

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Structural and electrical properties of AgInS_2 (AIS) thin films grown by single-source thermal evaporation method were studied. The films were annealed from 100 to 500℃ in air after the evaporation. The X-ray diffraction patterns indicated that the polycrystalline AIS films were successfully obtained by annealing above 300℃. The samples annealed above 300℃ have band gap energy of 1.90eV. A grain size increased with increasing annealing temperature. The maximum grain size of the samples was 2.7μm. And all samples were n-type conduction by thermo-probe analysis. The photoluminescence spectra of the samples obtained the broad spectra with the peak at 1.8eV. The dominant defect of the samples obtained by annealing above 300℃ was sulfur vacancy. The carrier concentration of samples obtained by annealing above 400℃ was about 1X10^<19>cm^<-3>. The carrier mobility of samples obtained by annealing above 300℃ increased the increasing with annealing temperature.
都城工業高等専門学校の論文